Innoscience announced new, low RDS(on), high-power devices in its ever-broadening family of 650V/700V enhancement-mode power transistors. New 30, 50, and 70mΩ RON parts are available in the industry-standard TOLL (TO-Leadless) package. The 70mΩ part is also available as an 8×8 DFN part. Members of a new high-power product platform from Innoscience, the new INN650TA0x0AH and […]
Transistors
Gate drivers rated for 1200 V nd 1700 V applications
Power Integrations announced a new family of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable operation. SCALE™-2 2SP0230T2x0 dual-channel gate drivers deploy short-circuit protection in less than two microseconds, protecting the compact SiC MOSFETs against damaging over-currents. The […]
SMD-based, GaN TOLL FETs are drop-in replacements for any e-mode devices
Transphorm, Inc. today introduced three SuperGaN® FETs in TOLL packages with on-resistances of 35, 50, and 72 milliohms. Transphorm’s TOLL package configuration is industry standard, meaning the SuperGaN TOLL FETs can be used as drop-in replacements for any e-mode TOLL solution. The new devices also offer Transphorm’s proven high voltage dynamic (switching) on-resistance reliability that […]
500 mA dual RETs offer high-power load switching for space-constrained applications
Nexperia released a new series of 500 mA dual resistor-equipped transistors (RET) in ultra-compact DFN2020(D)-6 packaging. These devices have been designed for load switching in wearables and smartphones as well as for use in digital circuits with higher power requirements. Such as space-constrained computing, communications, industrial, and automotive applications. Notably, the RET in DFN configuration […]
1200 V and 650 V IGBTs designed for EV PTC heaters
Magnachip Semiconductor Corporation announced the launch of its 1200V and 650V Insulated Gate Bipolar Transistors (IGBTs), designed for the positive temperature coefficient (PTC) heaters of electric vehicles (EVs). Built upon Magnachip’s cutting-edge Field Stop Trench technology, the newly introduced AMBQ40T120RFRTH (1200V) and AMBQ40T65PHRTH (650V) offer a minimum short-circuit withstand time of 10µs. This remarkable level […]
GaN driver sinks and sources up to 3A gate current to connected transistor
STMicroelectronics’ first galvanically isolated gate driver for gallium-nitride (GaN) transistors, the STGAP2GS, trims dimensions, and bill-of-materials costs in applications that demand superior wide-bandgap efficiency with robust safety and electrical protection. The single-channel driver can be connected to a high-voltage rail up to 1200V, or 1700V with the STGAP2GSN narrow-body version, and provides gate-driving voltage up […]
SuperGaN FETs establish cost-effective design option for power range exceeding 1 kW
Transphorm, Inc. released details on a high-performance, low-cost driver solution. For use in low- to mid-power applications such as LED lighting, charging, microinverters, UPSes, and gaming computers, the design option strengthens the company’s value proposition for customers in those segments of the $3 billion power market. Unlike competing e-mode GaN solutions that require custom drivers […]
600 V SJ MOSFET boasts RDS(on) of 44 mΩ for EV chargers and servers
Magnachip Semiconductor Corporation announced that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor Field Effect Transistors (SJ MOSFETs) consisting of nine distinct products featuring proprietary design technology. Magnachip’s proprietary design provides a specific on-resistance (RSP) reduction of about 10%, and this result was achieved while maintaining the same cell […]
How much can GaN improve sustainability and reduce CO2 emissions?
Gallium nitride (GaN) power semiconductors are about less — less CO2 emission from device fabrication, less materials in the devices and power converters using GaN, less cost due to higher frequency operation and smaller passive components, and less thermal dissipation due to higher efficiencies. Those performance factors combine to improve the sustainability of power converters […]
How multilevel converters and SiC can improve sustainability
Modular multilevel converters (MMCs) are an advanced form of a voltage source converter. They are emerging as the preferred choice in medium- and high-voltage green energy applications like high-voltage DC (HVDC) transmission systems, medium voltage motor drives including electric vehicles (EVs), wind and solar renewable energy systems, battery energy storage systems (BESS), and EV chargers […]
