ROHM has recently announced the availability of a new 1700V SiC MOSFET optimized for industrial applications, including manufacturing equipment and high-voltage general-purpose inverters. In recent years, the growing trend to conserve energy in all areas has increased the demand for energy-saving power semiconductors, particularly for applications in the industrial sector such as general-purpose inverters and […]
Transistors
SiC power MOSFET handles 225°C junction temperatures
TT Electronics, a global provider of engineered electronics for performance critical applications, today launched a Silicon Carbide (SiC) power MOSFET that is designed for high temperature, power efficiency applications with a maximum junction temperature of +225°C. As a result of this operating potential, the package has a higher ambient temperature capability and can therefore be […]
GaN power devices get wider distribution
Richardson RFPD, Inc. announced an agreement with GaN Systems Inc. Under the terms of the agreement, Richardson RFPD will sell GaN Systems’ GaN on Si power devices on a global basis, excluding Israel. GaN Systems manufactures a range of gallium nitride high-power transistors for consumer, enterprise, industrial, solar/wind/smartgrid, and transportation power-conversion applications. “GaN Systems adds […]
Tester checks IGBT thermal reliability
for electric, hybrid vehicles
A new platform tests electric and hybrid vehicle (EV/HEV) power electronics reliability during power cycling. Developed by Mentor Graphics, the MicReD Power Tester 600A lets EV/HEV development and reliability engineers test power electronics (such as insulated gate bipolar transistors – IGBTs, MOSFETs, transistors, and chargers) for mission-critical thermal reliability and lifecycle performance. The Mentor Graphics […]
1.2-kV IGBTs boast super-low switching losses
ON Semiconductor has introduced a new series of insulated gate bipolar transistors (IGBTs) that use its proprietary Ultra Field Stop trench technology. The NGTB40N120FL3WG, NGTB25N120FL3WG and NGTB40N120L3WG are designed to deliver elevated levels of operational performance in order to meet the exacting demands of modern switching applications (Ets). These 1200 V devices are able to achieve total […]
GaN HEMT die hit 8 GHz
Wolfspeed has released a new 28V, 30W GaN HEMT bare die at this year’s IEEE Wireless and Microwave Technology Conference (WAMICON), which took place April 11 – 13, 2016 in Clearwater Beach, Fla. Designed for up to 8GHz operation, the new 28V GaN HEMT die exhibits 12dB typical small signal gain at 8GHz, 17dB typical […]
