Infineon Technologies AG announces the new OptiMOS 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS(on) of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET. The device prevents damage to the load by limiting the high inrush current and ensures minimal losses […]
Power Components
Wide bandgap power devices from industrial motors to 8.5 kW data center systems
Navitas Seminconductor is demonstrating new gallium nitride (GaN) and silicon carbide (SiC) power semiconductor technologies at electronica 2024, focusing on applications in AI data centers, electric vehicles, renewable energy, and industrial systems. A new 8.5 kW power supply for AI and hyperscale data centers combines GaN power ICs with third-generation SiC MOSFETs. The SiC components, […]
Gate drivers protect IGBTs and SiC MOSFETS to 9.6 kV
STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimized desaturation protection and flexible Miller-clamp architecture. Featuring reinforced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, the STGAP3S withstands 9.6kV transient isolation voltage (VIOTM) with 200V/ns common-mode […]
Flat-wire construction yields low-profile inductors
Bourns, Inc. released its Model SRP-F Series shielded power inductors. The nine models in the series feature low DCR with flat wire construction in a small, low-profile (0.7 to 1.0 mm) form factor. The flat wire construction improves the efficiency of these new power inductors by significantly reducing DCR compared to other similarly sized power inductor devices […]
Mitigate reverse recovery overshoot in MOSFET body diodes
Because of their compact size, higher efficiency, and superior performance in high-power applications, SiC MOSFETs are now replacing Si devices in switching applications. SiC devices enable faster switching times, significantly reducing switching losses. These advantages stem from the unique electrical and material properties of SiC-based devices — snappy reverse recovery inherent to the structure of […]
IP67 motor series spans 119 – 1,000 kW, 0 – 4,000 RPM range
Danfoss Power Solutions announced the launch of its Editron EM-PMI540B electric motor. Based on synchronous reluctance-assisted permanent magnet technology, the EM-PMI540B functions as both a motor and a generator. Designed for electric or hybrid drivetrains in demanding applications, such as off-highway machinery and marine vessels, it offers high efficiency, non-stop continuous power, and a high […]
Multi-output power supply IC features 1700 V GaN switch
Power Integrations has introduced a 1700 V gallium nitride (GaN) switch, the 1700 V InnoMux-2. marking a new technical milestone in high-voltage power semiconductors. The technology is implemented in the company’s InnoMux-2 family of power supply ICs, designed for multi-output power supplies operating from high-voltage DC sources. “The new device is fabricated using our PowiGaN™ technology. […]
SMD power modules provide flexible gate drive bias voltages
Gate drivers need exact voltages for the highest efficiency and system reliability. A new range of isolated power modules from RECOM provides an economical and high-performance solution in a tiny 36-pin SSOP SMD package, just 12.83 x 7.5 x 3.55mm. The isolated modules have multiple input ranges, covering 8.5V to 27VDC for 12V, 15V, and […]
AEC-Q101 certified GaN devices enable 200/300m LiDAR range recognition
Innoscience Technology has expanded its portfolio with two 100V automotive-grade GaN devices. The company’s INN100W135A-Q (RDS(on),max = 13.5 mΩ) and smaller package INN100W800A-Q (RDS(on),max = 80 mΩ) are both certified to AEC-Q101 and optimized for LiDAR as well as for high power density DC-DC converters and Class D audio applications in the automotive sector. The […]
IGBT and MOSFET drivers provide 4 A in 200 nsec
Vishay Intertechnology, Inc. introduced two new IGBT and MOSFET drivers in the compact, high isolation stretched SO-6 package. Delivering high peak output currents of 3 A and 4 A, respectively, the Vishay Semiconductors VOFD341A and VOFD343A offer high operating temperatures to +125 °C and low propagation delay of 200 ns maximum. Consisting of an AlGaAs LED optically coupled to an […]
