Navitas Seminconductor is demonstrating new gallium nitride (GaN) and silicon carbide (SiC) power semiconductor technologies at electronica 2024, focusing on applications in AI data centers, electric vehicles, renewable energy, and industrial systems. A new 8.5 kW power supply for AI and hyperscale data centers combines GaN power ICs with third-generation SiC MOSFETs. The SiC components, […]
Data center
8.5 kW PSU achieves 98% efficiency for AI and data centers
Navitas Semiconductor has released an 8.5 kW power supply unit (PSU) that utilizes GaN and SiC technologies and has achieved 98% efficiency for AI and hyperscale data centers. The AI-optimized 54V output PSU meets Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications. It incorporates GaNSafe and Gen-3 Fast SiC MOSFETs in 3-phase interleaved […]
Power modules target data center energy reduction amid AI growth
Infineon Technologies AG is launching the TDM2354xD and TDM2354xT dual-phase power modules with best-in-class power density for high-performance AI data centers. These modules enable true vertical power delivery (VPD) and offer the industry’s best current density of 1.6 A/mm 2. They follow the TDM2254xD dual-phase power modules introduced by Infineon earlier this year. The TDM2354xD and TDM2354xT […]
Solid-state relay switches 100 V in 0.1 ms
Vishay Intertechnology, Inc. introduced the industry’s first 1 Form A solid-state relay to offer AEC-Q102 qualification and a 100 V load voltage. Offered in the low profile SOP-4 package, the Vishay Semiconductors VORA1010M4 delivers the industry’s fastest turn-on and turn-off times of 0.1 ms typical, in addition to the highest operating temperature of +125 °C. […]
Asymmetrical TVS diode protects SiC MOSFETS
Littelfuse, Inc. announced the SMFA Asymmetrical Series Surface-Mount TVS Diode, the first-to-market asymmetrical TVS solution specifically designed to protect Silicon Carbide (SiC) MOSFET gates from overvoltage events. As SiC MOSFETs become increasingly popular due to their faster switching speeds and superior efficiency compared to traditional Silicon MOSFETs and IGBTs, the need for robust gate protection […]
Fuse series in 150A an d200 A ratings designed to address space constraints in PCB layout
Littelfuse, Inc. has introduced the 871 Series Ultra-High Amperage SMD Fuse, complementing the existing 881 Series. The new 871 Series offers 150A and 200A fuse ratings, expanding upon the 881 Series’ 125A maximum rating. This surface-mounted solution aims to eliminate the need for parallel fusing configurations in electronic designs. The 871 Series features a small-sized […]
Low noise, high voltage chip dividers now available up to 4KV
High voltage applications frequently require high resistance value resistors with the ability to handle high working and overload voltages. Engineers may have difficulty finding thick film chip resistors with the required precision for applications requiring tight resistance tolerance and TCR tracking. For precision high-voltage applications, a high-voltage divider chip can be beneficial. Stackpole’s new HVCD […]
5 A MOSFET gate drivers spin motors and drive power supplies
Littelfuse, Inc. announces the launch of the IX4341 and IX4342 dual 5 ampere low-side MOSFET gate drivers. These gate drivers are specifically designed for driving MOSFETs and complete the existing IX434x driver series by adding the remaining two logic input versions. The IX434x series now consists of dual non-inverting, dual inverting, and non-inverting and inverting input […]
Power device portfolio expanded with low-Ohmic, high-current eFuse
Nexperia announced the NPS3102A and NPS3102B electronic fuses (eFuses) as the latest additions to its ever-expanding power device portfolio. These low-ohmic (17 mΩ), high current (13.5 A), and resettable electronic fuses help to protect downstream loads from exposure to excessive voltages while also protecting power supplies from load faults and large inrush currents. These eFuses […]
Latest SiC MOSFETs offer improved performance at lower cost per kW
onsemi has introduced its latest generation silicon carbide technology platform, EliteSiC M3e MOSFETs, to address the growing demand for electrification and renewable energy resources. The company plans to release multiple additional generations through 2030 to support global climate goals and the transition to electrification. The EliteSiC M3e MOSFETs are designed to improve performance and reliability […]
