Magnachip Semiconductor Corporation announced the launch of its 1200V and 650V Insulated Gate Bipolar Transistors (IGBTs), designed for the positive temperature coefficient (PTC) heaters of electric vehicles (EVs).

Built upon Magnachip’s cutting-edge Field Stop Trench technology, the newly introduced AMBQ40T120RFRTH (1200V) and AMBQ40T65PHRTH (650V) offer a minimum short-circuit withstand time of 10µs. This remarkable level of ruggedness protects PTC heaters from permanent failure in the event of overcurrent conditions.

Furthermore, the thick and large heat sink of the TO-247 package allows these new IGBTs to excel in heat dissipation. Therefore, these IGBTs are well-suited for applications requiring high power and efficiency, such as PTC heaters’ upper and lower sides of power management integrated circuits.