Pulsiv Limited become the world’s first company to deliver 240W from a single USB-C port. This ground-breaking achievement has been developed by combining a Pulsiv OSMIUM front-end design with an industry standard flyback which passes strict EMC/Line Current requirements and is guaranteed to change the global charging market. Existing 240W USB-C chargers distribute the power across multiple ports […]
Reference design
65 W USB-C reference design keeps cool with 96% efficiency
Pulsiv Limited announced the release of the world’s most efficient* 65W USB-C GaN optimized reference design developed to address the complex challenges associated with thermal performance in power supplies. This ground-breaking and highly anticipated development is set to revolutionize the USB-C fast charging space by offering a unique combination of features and benefits not seen in other designs. The PSV-RDAD-65USB […]
APEC 2024: Power to the data center
Data centers power the world, or does the world power data centers? According to one report, datacenters currently consume 2% of the world’s electricity and that could increase to 8% by 2030. Much of that electricity arrives at the load as low voltage, high current. For example, a single IC, processor, graphics processor, AI chip, […]
Collaboration results in 500 W power supply with totem pole PFC launched
Tagore Technology announced a partnership with Inventchip to introduce a new compact 500 W power supply reference design solution with a Totem Pole PFC front-end and an LLC back-end. Tagore Technology has been delivering disruptive GaN semiconductor solutions for more than 12 years. The reference design uses Tagore’s TP44100SG (90mOhm) and Inventchip’s CCM Totem Pole […]
Multi-port fast charger reference design now includes 65W 1C1A option
Silanna Semiconductor has unveiled the latest addition to its family of AnyPort fully integrated reference designs that provide everything an engineer needs to prototype and test fully functional multi-port fast charger applications rapidly. Built around Silanna’s CO2 Smart Power advanced AC/DC controller and high-frequency DC/DC converter technology and featuring a super junction FET, the RD-35 […]
eGan IC-based reference design addresses USB PD 3.1
EPC announces the availability of the EPC9177, a digitally-controlled, single-output synchronous buck converter reference design board operating at 720 kHz switching frequency converting an input voltage of 48 V, 36 V, and 28 V to a regulated 12 V output voltage and delivering up to 20 A continuous output current. The small area (21 mm […]
Controller-GaN FET combo for designs of 140 W small fast-charging devices
EPC & Richtek announces the availability of a 4-switches bidirectional buck-boost controller reference design board that converts an input voltage of 12 V – 24 V to a regulated 5 V – 20 V output voltage and delivers up to 5 A continuous current and 6.5 A maximum current. The combination of the new Richtek […]
Cloud-based digital twin helps improve EV battery performance
NXP Semiconductors has developed a solution to connect its high-voltage battery management system (HVBMS) through its S32G GoldBox vehicle networking reference design to the cloud to leverage an artificial intelligence (AI) powered battery digital twin. By utilizing Electra Vehicles, Inc.’s EVE-Ai 360 Adaptive Controls technology, NXP unleashes the power of digital twin models in the cloud to […]
Turnkey GaN 140-W charger reference design covers USB PD3.1, single port type-c
GaN Systems announced the availability of a new turnkey 140W AC/DC charger reference design with USB PD3.1, Single Port Type-C Output. Compared to silicon-based chargers, this design is 40% lighter and 50% smaller, featuring an ultra-high-power density of 23W/in3. This design enhances GaN Systems’ portfolio (65W, 100W, 140W, 250W) of turnkey charger solutions for the consumer electronics market, […]
Compact eGaN FETs target high power density converter apps
Efficient Power Conversion Corporation expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2066 (0.8 mΩ typical, 40 V) GaN FET. The low losses and small size of the EPC2066 make it the ideal switch for the secondary side of high power density 40 V – 60 V to […]
