onsemi has introduced its latest generation silicon carbide technology platform, EliteSiC M3e MOSFETs, to address the growing demand for electrification and renewable energy resources. The company plans to release multiple additional generations through 2030 to support global climate goals and the transition to electrification. The EliteSiC M3e MOSFETs are designed to improve performance and reliability […]
MOSFETS
SiC MOSFETs optimized for AI, EV, and solar systems
Navitas Semiconductor announces the launch of their new Gen-3 ‘Fast’ (G3F) 650 V and 1,200 V SiC MOSFETs, designed for applications such as AI data center power supplies, on-board chargers (OBCs), fast EV roadside chargers, and solar/energy-storage systems (ESS). This new portfolio covers industry-standard packages from D2PAK-7 to TO-247-4, tailored for high-power, high-reliability applications. The G3F […]
How soft switching and SiC devices improve power conversion
By Mike Zhu, Qorvo Soft switching in DC-DC converters reduces energy loss. SiC transistors allow for higher switching frequencies and, thus, smaller magnetics, which reduces heat. Efficiency and power density are both essential factors in the design of power converters. Every contributor to energy loss generates heat that needs removal by costly and power-hungry cooling […]
Next-gen, 400 V MOSFET family for advanced AI server power supplies
With the increasing power requirements of Artificial Intelligence (AI) processors, server power supplies (PSUs) must deliver more and more power without exceeding the defined dimensions of the server racks. This is driven by a surge in energy demand for high-level GPUs, which could consume 2 kW or more per chip by the end of the […]
Diodes provide current from 10.5A to 15A
Diodes Incorporated has announced the expansion of its highly successful DML30xx series smart load switches. The four new products, DML3008LFDS, DML3010ALFDS, DML3011ALFDS, and DML3012LDC, provide high-current (10.5A to 15A) power domain switching control for voltage rails from 0.5V to 20V. Through the array of embedded functions, these devices are highly effective at handling all aspects of power delivery to microcontrollers, […]
Gate driver optimizes EMI and power efficiency for motor control
Infineon Technologies AG introduces the MOTIX TLE9140EQW gate driver IC for brushless DC motors targeting the demanding 24/48 V market. The TLE9140 is tailored for automotive motor control applications featuring higher voltage requirements from 24 V up to a maximum of 72 V, where higher system reliability and faster switching behavior are necessary. The IC […]
Transformers designed for wide operating frequency and temperature ranges
TDK Corporation has introduced two new types of the EPCOS InsuGate series (B78541A). These compact SMT transformers with high working voltage are suitable for gate driver applications for IGBTs and MOSFETs in e-mobility and industrial electronics. The components with a MnZn ferrite core are designed for operating frequencies of 100 kHz to 500 kHz and […]
Power MOSFET supports USB-PD 3.1 buck-boost converters
Alpha and Omega Semiconductor Limited announced its AONZ66412 XSPairFET MOSFET designed for Buck-Boost converters in USB PD 3.1 Extended Power Range (EPR) applications. The USB PD 3.1 EPR increases the USB-C maximum power up to 240W. AONZ66412 is defined to support the most commonly addressed power range of up to 140W at 28V, with two 40V […]
2000 V, SiC MOSFETs and diodes address solar and EV charging applications
Infineon Technologies AG introduces the new CoolSiC MOSFETs 2000 V in the TO-247PLUS-4-HCC package to meet designers’ demand for increased power density without compromising the system’s reliability even under demanding high voltage and switching frequency conditions. The CoolSiC MOSFETs offer a higher DC link voltage so that the power can be increased without increasing the […]
Gen-2 MOSFET paves way for greener power systems and EV charging
Infineon Technologies AG opens a new chapter in power systems and energy conversion and introduces the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20 percent compared to […]
