Navitas Semiconductor, El Segundo, Calif., has won an honorable mention in the recently concluded 2022 Leap Awards for product innovation.

The LEAP Awards celebrates the most innovative and forward-thinking products serving the design engineering space. Navitas won in the power electronics category which covers power supplies, transistors and any other power electronic circuits, components or assemblies used in power electronics, including battery and battery management.

The winning entry was the GaNFast power ICs which integrate GaN power with drive, control, sensing and protection, allowing systems to consume less energy, minimize and reduce additional electronic components (e.g. magnetics, filters, capacitors), as well as mechanical components (e.g. PCB area, metal/plastic housing, aluminium heatsinks), which reduce oil/refinement demand, lowering shipping costs and CO2 footprint.

Navitas’ latest family of GaNFast Half-Bridge ICs with GaNSense technology integrate a half-bridge power stage, which is a fundamental building block for inverters used in many applications from datacenters, motor drives, and electric vehicles. The NV6247 provides designers with the most-advanced, integrated,
third-generation integrated GaN platform using GaNSense technology featuring loss-less current sensing and the world’s fastest short-circuit protection, with a ‘detect-to-protect’ speed of only 30 nsec, 6x faster than discrete solutions.

NV6247 is rated at 650 V for nominal operation plus an 800 V peak-rating for robust operation during transient events. As a truly integrated power IC, the GaN gate is fully-protected and the whole device rated at an industry-leading electrostatic-discharge (ESD) specification of 2 kV.

These GaN ICs combine the highest dV/dt immunity, high-speed integrated drive and thermally optimized, low-inductance, QFN packaging to enable designers to achieve simple, quick, and reliable solutions. Navitas’ GaN IC technology extends the capabilities of traditional topologies such as active clamp flyback, half-bridge, buck/boost, LLC and other resonant converters to reach MHz+ frequencies with very high efficiencies and low EMI to achieve unprecedented power densities.