The adoption of commercial smart lighting systems has grown significantly as organizations strive to improve energy efficiency and operational costs in buildings. Power over Ethernet (PoE) is rising in popularity for these systems, providing a reliable and easy-to-install solution that manages power and data over a single Ethernet cable. To support larger and more efficient […]
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Specialized diodes, Part 2: Varactor, Gunn, and PIN diodes
Part 1 of this FAQ reviewed the standard PN semiconductor diode, and looked at some specialized variations called the tunnel, Zener/avalanche, and Schottky diodes. Part 2 briefly explores the varactor, Gunn, and PIN diodes. Q: What about the varactor diode? A: The varactor diode (Figure 1), also called a voltage variable capacitor (VVC) or varicap […]
Specialized diodes, Part 1: Tunnel, Zener/Avalanche, and Schottky diodes
There are diode varieties which do much more than just block current flow in one direction and allow it in the other; some of these special diodes have favorable attributes while others are essential in modern electronics. Every electronic engineer is familiar with the diode: it’s a basic, widely used, two-terminal semiconductor device. The diode’s […]
Power SiC components include 600-V MOSFETs, 600/1,200-V Schottky barrier diodes
Demand is growing for SiC power products that improve system efficiency, robustness and power density in automotive, industrial and aerospace and defense applications. Microchip Technology Inc., via its Microsemi subsidiary, today announced the production release of a family of SiC power devices that offer proven ruggedness and the performance benefits of wide-bandgap technology. Complemented by Microchip’s broad range […]
Power-supply overvoltage protection, Part 2: Clamps
Part 1 of this FAQ discussed the context of overvoltage protection and crowbars which provide OVP. This part will look at clamps for OVP use. Q: What does the clamp do? A: A clamp conducts just-enough current to maintain the voltage across it at a safe, desired value when the transient is above the clamp’s […]
Low RDSon SiC MOSFET power modules in SP6LI package offers 2.9 nH stray inductance
Microsemi Corporation announced its extremely low inductance package dedicated to high current, low specific on-resistance (RDSon) Silicon Carbide (SiC) MOSFET power modules. The new package, developed specifically for the company’s SP6LI product family, is designed to offer 2.9 nanohenry (nH) stray inductance suitable for SiC MOSFET technology and enable high current, high switching frequency as […]
3-kW 3-phase PFC reference design uses SiC diodes and MOSFETs
Microsemi Corporation announced the availability of its new scalable 30-kilowatt (kW), three-phase Vienna power factor correction (PFC) topology reference design featuring its Silicon Carbide (SiC) diodes and MOSFETS. Developed in collaboration with North Carolina State University (NCSU), the scalable, user-friendly solution is ideally suited for fast electric vehicle (EV) charging and other high power automotive and industrial applications, providing customers with more efficient switching […]
Microsemi to develop 1.7 kV and 3.3 kV SiC MOSFETS and diodes as part of PowerAmerica Institute’s DOE initiative
Microsemi Corporation announced it has become a member of PowerAmerica—a manufacturing institute comprised of public and private representatives from the semiconductor industry, the U.S. Department of Energy, national laboratories and academia—to accelerate the commercialization and adoption of wide bandgap semiconductors. Microsemi was awarded a contract as part of PowerAmerica’s $70 million dollar backing from the U.S. Department of Energy […]
