Featuring reinforced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, the STGAP3S withstands 9.6kV transient isolation voltage (VIOTM) with 200V/ns common-mode transient immunity (CMTI). With its state-of-the-art isolation, the STGAP3S enhances reliability in motor drives for industrial applications such as air conditioning, factory automation, and home appliances. The new drivers are also used in power and energy applications including charging stations, energy storage systems, power-factor correction (PFC), DC/DC converters, and solar inverters.

The STGAP3S product family includes different options with 10A and 6A current capability, each of them available with differentiated Under Voltage Lock-Out (UVLO) and desaturation intervention thresholds. This helps designers select the best device to match the performance of their chosen SiC MOSFET or IGBT power switches.

The Desaturation protection implements an overload and short-circuit protection for the external power switch providing the possibility to adjust the turn-off strategy using an external resistor to maximize the protection turn-off speed while avoiding excessive overvoltage spikes. The undervoltage-lockout protection prevents turn-on with insufficient drive voltage.

The driver’s integrated Miller Clamp architecture provides a pre-driver for an external N-channel MOSFET. Designers can thus leverage flexibility to select a suitable intervention speed that prevents induced turn-on and avoids cross-conduction.

The available device variants allow a choice of 10A sink/source and 6A sink/source drive-current capability for optimum performance with the chosen power switch with desaturation-detection and UVLO thresholds optimized for IGBT or SiC technology. The fault conditions of desaturation, UVLO and overtemperature protection are notified with two dedicated open drain diagnostic pins. 

The STGAP3SXS is in production now, in the SO-16W wide-body package, from $2.34 for orders of 1000 pieces. Please contact your ST sales office for pricing options and sample requests.

Please visit www.st.com/stgap3s or more information.

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The isolated modules have multiple input ranges, covering 8.5V to 27VDC for 12V, 15V, and 24VDC nominals with power ratings up to 2.5W, depending on the selected variant and temperature range. Each part has two fully regulated outputs, which can be user-programmed as asymmetric positive and negative values or as a single positive or negative value to suit requirements for a wide range of gate drive voltages for IGBTs, Si and SiC MOSFETs, and GaN cascode HEMT cells. For example, part R12C2T25/R can operate over 9-18VDC input and be programmed for +18V/-5V output to suit a SiC MOSFET. The working temperature ranges from -40°C up to 100°C, with derating depending on the variant. The isolation rating for the series is 5kVAC/1 min reinforced and 1.4kVDC working, with a low isolation capacitance of less than 3.5pF and a dV/dt immunity of 150V/ns.

Extensive control and protection features include input under and over-voltage lockout, over-temperature, and output over-load and under and over-voltage. A shut-down control pin is provided, and a good power signal is available to indicate that the outputs are within acceptable tolerance and that the gate drive may be applied safely.

Parts include a three-year warranty. Samples and OEM pricing are available from all authorized distributors or directly from RECOM.

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Innoscience Technology has expanded its portfolio with two 100V automotive-grade GaN devices. The company’s INN100W135A-Q (R_DS(on),max  = 13.5 mΩ) and smaller package INN100W800A-Q (R_DS(on),max = 80 mΩ) are both certified to AEC-Q101 and optimized for LiDAR as well as for high power density DC-DC converters and Class D audio applications in the automotive sector.

The INN100W135A-Q and the ultra-compact INN100W800A-Q, with a WLCSP package measuring 2.13mm x 1.63mm and 0.9mm x 0.9mm respectively, offer significant advantages in terms of size and power efficiency. Both devices are specifically tailored for the requirements of L2+/L3 assisted driving systems, with switching speeds up to 13 times faster and pulse widths reduced to one-fifth of those of silicon solutions. Parameters like Qg and Qoss are also improved by 1.5 to 3 times over their silicon counterparts. This results in medium to long-range recognition capabilities of  200/300m, essential for advanced driver assistance and autonomous driving applications.

These automotive-grade GaN products have already entered mass production, with batch orders being fulfilled to meet demand. Detailed product specifications and simulation models are available on the Innoscience website, where customers can also request samples and additional information.

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