Power Electronic Tips https://www.powerelectronictips.com/category/dcdc/power-modules/ Power Electronic News, Editorial, Video and Resources Wed, 23 Oct 2024 18:51:26 +0000 en-US hourly 1 https://wordpress.org/?v=6.7 https://www.powerelectronictips.com/wp-content/uploads/2016/11/cropped-favicon-512x512-32x32.png Power Electronic Tips https://www.powerelectronictips.com/category/dcdc/power-modules/ 32 32 IGBT and MOSFET drivers provide 4 A in 200 nsec https://www.powerelectronictips.com/igbt-and-mosfet-drivers-provide-4-a-in-200-nsec/ https://www.powerelectronictips.com/igbt-and-mosfet-drivers-provide-4-a-in-200-nsec/#respond Wed, 23 Oct 2024 18:51:26 +0000 https://www.powerelectronictips.com/?p=23488 Vishay Intertechnology, Inc. introduced two new IGBT and MOSFET drivers in the compact, high isolation stretched SO-6 package. Delivering high peak output currents of 3 A and 4 A, respectively, the Vishay Semiconductors VOFD341A and VOFD343A offer high operating temperatures to +125 °C and low propagation delay of 200 ns maximum. Consisting of an AlGaAs LED optically coupled to an […]

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Vishay Intertechnology, Inc. introduced two new IGBT and MOSFET drivers in the compact, high isolation stretched SO-6 package. Delivering high peak output currents of 3 A and 4 A, respectively, the Vishay Semiconductors VOFD341A and VOFD343A offer high operating temperatures to +125 °C and low propagation delay of 200 ns maximum.

Consisting of an AlGaAs LED optically coupled to an integrated circuit with a power output stage, the optocouplers released today are intended for solar inverters and microinverters; AC and brushless DC industrial motor control inverters; and inverter stages for AC/DC conversion in UPS. The devices are ideally suited for directly driving IGBTs with ratings up to 1200 V / 100 A.

The high operating temperature of the VOFD341A and VOFD343A provides a higher temperature safety margin for more compact designs, while their high peak output current allows for faster switching by eliminating the need for an additional driver stage. The devices’ low propagation delay minimizes switching losses while facilitating more precise PWM regulation.

The optocouplers’ high isolation package enables high working voltages up to 1.140 V, which allows for high voltage inverter stages while still maintaining enough voltage safety margin. The RoHS-compliant devices offer high noise immunity of 50 kV/µs, which prevents fail functions in fast switching power stages.

Samples and production quantities of the VOFD341A and VOFD343A are available now, with lead times of six weeks.

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Power modules target data center energy reduction amid AI growth https://www.powerelectronictips.com/power-modules-target-data-center-energy-reduction-amid-ai-growth/ https://www.powerelectronictips.com/power-modules-target-data-center-energy-reduction-amid-ai-growth/#respond Tue, 22 Oct 2024 17:14:37 +0000 https://www.powerelectronictips.com/?p=23484 Infineon Technologies AG  is launching the TDM2354xD and TDM2354xT dual-phase power modules with best-in-class power density for high-performance AI data centers. These modules enable true vertical power delivery (VPD) and offer the industry’s best current density of 1.6 A/mm 2. They follow the TDM2254xD dual-phase power modules introduced by Infineon earlier this year. The TDM2354xD and TDM2354xT […]

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Infineon Technologies AG  is launching the TDM2354xD and TDM2354xT dual-phase power modules with best-in-class power density for high-performance AI data centers. These modules enable true vertical power delivery (VPD) and offer the industry’s best current density of 1.6 A/mm 2. They follow the TDM2254xD dual-phase power modules introduced by Infineon earlier this year.

The TDM2354xD and TDM2354xT modules combine Infineon’s robust OptiMOS 6 trench technology, a chip-embedded package that enables superior power density through enhanced electrical and thermal efficiencies, and a new inductor technology to enable lower profile and therefore, true vertical power delivery. As a result, the modules set new standards in power density and quality to maximize the compute performance and efficiency of AI data centers. The TDM2354xT modules support up to 160 A and are the industry’s first Trans-Inductor Voltage Regulator (TLVR) modules in a small 8 x 8 mm² form factor. Combined with Infineon’s XDP™ controllers, they offer extremely fast transient response and minimize on-board output capacitance by up to 50 percent, further increasing system power density.

The new modules will be showcased at Infineon’s global technology forum OktoberTech 2024 in Silicon Valley on 17 October and at electronica 2024 in Munich from November 12 to 14 (hall C3, booth 502).

Samples of the OptiMOS dual-phase power modules TDM2354xD and TDM2354xT are available now.

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Power module reduces SiC content while maintaining performance https://www.powerelectronictips.com/power-module-reduces-sic-content-while-maintaining-performance/ https://www.powerelectronictips.com/power-module-reduces-sic-content-while-maintaining-performance/#respond Tue, 22 Oct 2024 16:43:18 +0000 https://www.powerelectronictips.com/?p=23480 Infineon Technologies AG is introducing the HybridPACK Drive G2 Fusion, establishing a new power module standard for traction inverters in the e-mobility sector. The HybridPACK Drive G2 Fusion is the first plug’n’play power module that implements a combination of Infineon’s silicon and silicon carbide (SiC) technologies. This cutting-edge solution provides an ideal balance between performance […]

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Infineon Technologies AG is introducing the HybridPACK Drive G2 Fusion, establishing a new power module standard for traction inverters in the e-mobility sector. The HybridPACK Drive G2 Fusion is the first plug’n’play power module that implements a combination of Infineon’s silicon and silicon carbide (SiC) technologies. This cutting-edge solution provides an ideal balance between performance and cost efficiency, giving more choice in the optimization of inverters.

One of the main differences between silicon and SiC in power modules is that SiC has a higher thermal conductivity, breakdown voltage, and switching speed, making it more efficient, but also more expensive than silicon-based power modules. With the new module, the SiC content per vehicle can be reduced, while maintaining vehicle performance and efficiency at a lower system cost. For example, system suppliers can realize nearly the system efficiency of a full SiC solution with only 30 percent SiC and 70 percent silicon area.

HybridPACK Drive G2 Fusion expands Infineon’s HybridPACK Drive power module portfolio and can be quickly and easily integrated into vehicle components or modules without requiring complex adjustments or configurations. The HybridPACK Drive G2 Fusion module features up to 220 kW in the 750 V class. It ensures high reliability over the entire temperature range from -40 °C to +175 °C and improved thermal conductivity. The unique properties of Infineon’s CoolSiC technology and its silicon IGBT EDT3 technology with very fast turn-on enable the use of a single gate driver or dual gate drivers. This allows easy re-design from full silicon or full SiC-based inverters to a fusion inverter. Generally, Infineon’s holistic expertise in SiC MOSFET and silicon IGBT technology, power module packaging, gate drivers as well as sensors enables premium products with cost savings at the system level. One example is the integration of Swoboda or XENSIV Hall sensors in the HybridPACK Drive package for more precise and efficient motor control.

Infineon will showcase the new HybridPACK Drive G2 Fusion at electronica 2024 in Munich from November 12 to 15 (hall C3, booth 502).

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