The 100 V OptiMOS 5 Linear FET 2 is available in a TO-leadless package (TOLL) and offers a 12 times higher SOA at 54 V at 10 ms and 3.5 times higher SOA at 100 µs compared to a standard OptiMOS 5 with similar R _DS(on). The latter improvement is particularly important for the battery protection performed inside the battery management system (BMS) in case of a short circuit event. During such events, the current distribution between parallel MOSFETs is critical for the system design and reliability. The OptiMOS 5 Linear FET 2 features an optimized transfer characteristic that allows for improved current sharing. Taking into account the wide SOA and improved current sharing, the number of components can be reduced by up to 60 percent in designs where the number of components is determined by the short-circuit current requirement. This enables high power density, efficiency, and reliability for battery protection which is used in a wide range of applications including power tools, e-bikes, e-scooters, forklifts, battery backup units, and battery-powered vehicles.

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A new 8.5 kW power supply for AI and hyperscale data centers combines GaN power ICs with third-generation SiC MOSFETs. The SiC components, developed through two decades of research, use a trench-assisted planar technology that reduces case temperatures by up to 25°C compared to current devices. Testing indicates this temperature reduction can extend component lifespan by a factor of three.

The semiconductor advances include motor drive ICs for appliance and industrial applications, along with 650V bi-directional GaN technology for power conversion. New SiC modules target power grid infrastructure, renewable energy systems, EV charging stations, and uninterruptible power supplies.

Analysis from Yole Group indicates GaN and SiC technologies may represent 30% of the power semiconductor market by 2027, driven by demand for higher efficiency in data centers and electric vehicles. The technology’s reduced carbon footprint could contribute to CO2 emissions reduction targets through improved power conversion efficiency.

Technical discussions at the conference will examine how wide bandgap semiconductors can address thermal management challenges in high-power applications.

The technologies will be displayed at Hall C3, booth #129 at Trade Fair Center Messe München from November 12th-15th, 2024.

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Featuring reinforced capacitive galvanic isolation between the gate-driving channel and the low-voltage control and interface circuitry, the STGAP3S withstands 9.6kV transient isolation voltage (VIOTM) with 200V/ns common-mode transient immunity (CMTI). With its state-of-the-art isolation, the STGAP3S enhances reliability in motor drives for industrial applications such as air conditioning, factory automation, and home appliances. The new drivers are also used in power and energy applications including charging stations, energy storage systems, power-factor correction (PFC), DC/DC converters, and solar inverters.

The STGAP3S product family includes different options with 10A and 6A current capability, each of them available with differentiated Under Voltage Lock-Out (UVLO) and desaturation intervention thresholds. This helps designers select the best device to match the performance of their chosen SiC MOSFET or IGBT power switches.

The Desaturation protection implements an overload and short-circuit protection for the external power switch providing the possibility to adjust the turn-off strategy using an external resistor to maximize the protection turn-off speed while avoiding excessive overvoltage spikes. The undervoltage-lockout protection prevents turn-on with insufficient drive voltage.

The driver’s integrated Miller Clamp architecture provides a pre-driver for an external N-channel MOSFET. Designers can thus leverage flexibility to select a suitable intervention speed that prevents induced turn-on and avoids cross-conduction.

The available device variants allow a choice of 10A sink/source and 6A sink/source drive-current capability for optimum performance with the chosen power switch with desaturation-detection and UVLO thresholds optimized for IGBT or SiC technology. The fault conditions of desaturation, UVLO and overtemperature protection are notified with two dedicated open drain diagnostic pins. 

The STGAP3SXS is in production now, in the SO-16W wide-body package, from $2.34 for orders of 1000 pieces. Please contact your ST sales office for pricing options and sample requests.

Please visit www.st.com/stgap3s or more information.

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