A new 8.5 kW power supply for AI and hyperscale data centers combines GaN power ICs with third-generation SiC MOSFETs. The SiC components, developed through two decades of research, use a trench-assisted planar technology that reduces case temperatures by up to 25°C compared to current devices. Testing indicates this temperature reduction can extend component lifespan by a factor of three.

The semiconductor advances include motor drive ICs for appliance and industrial applications, along with 650V bi-directional GaN technology for power conversion. New SiC modules target power grid infrastructure, renewable energy systems, EV charging stations, and uninterruptible power supplies.

Analysis from Yole Group indicates GaN and SiC technologies may represent 30% of the power semiconductor market by 2027, driven by demand for higher efficiency in data centers and electric vehicles. The technology’s reduced carbon footprint could contribute to CO2 emissions reduction targets through improved power conversion efficiency.

Technical discussions at the conference will examine how wide bandgap semiconductors can address thermal management challenges in high-power applications.

The technologies will be displayed at Hall C3, booth #129 at Trade Fair Center Messe München from November 12th-15th, 2024.

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The AI-optimized 54V output PSU meets Open Compute Project (OCP) and Open Rack v3 (ORv3) specifications. It incorporates GaNSafe and Gen-3 Fast SiC MOSFETs in 3-phase interleaved PFC and LLC topologies, delivering high efficiency and performance with reduced component count. The 3-phase topology for both PFC and LLC results in low ripple current and EMI. The design uses 25% fewer GaN and SiC devices compared to alternative systems, reducing costs. The PSU operates with input voltage from 180 to 264 Vac, provides 12V standby output, and functions between -5°C to 45°C. At 8.5 kW, it maintains a 10 ms hold-up time, extensible to 20 ms.

The 3-Phase LLC topology uses high-power GaNSafe, which is designed for high-power applications in AI data centers and industrial markets. The 4th generation technology integrates control, drive, sensing, and protection features. GaNSafe includes short-circuit protection (350ns max latency), 2kV ESD protection on all pins, eliminates negative gate drive, and offers programmable slew rate control. These features operate with 4-pins, allowing package use similar to discrete GaN FET without requiring a VCC pin. The 650V GaNSafe in TOLL and TOLT packages suits applications from 1 kW to 22 kW, with RDS(ON)MAX ranging from 25 to 98 mΩ.

The 3-Phase interleaved CCM TP-PFC uses Gen-3 Fast SiC MOSFETs with “trench-assisted planar” technology developed through ongoing SiC innovation. This technology delivers consistent performance across temperatures, supporting EV charging and AI data center applications.

The PSU addresses power infrastructure challenges data centers face when implementing advanced AI GPU systems. It will be exhibited at Electronica 2024 (Hall C 3, booth 129, November 12th–15th).

The PSU will be displayed for the first time at Electronica 2024 (Hall C 3, booth 129, November 12^th– 15^th).

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The TDM2354xD and TDM2354xT modules combine Infineon’s robust OptiMOS 6 trench technology, a chip-embedded package that enables superior power density through enhanced electrical and thermal efficiencies, and a new inductor technology to enable lower profile and therefore, true vertical power delivery. As a result, the modules set new standards in power density and quality to maximize the compute performance and efficiency of AI data centers. The TDM2354xT modules support up to 160 A and are the industry’s first Trans-Inductor Voltage Regulator (TLVR) modules in a small 8 x 8 mm² form factor. Combined with Infineon’s XDP controllers, they offer extremely fast transient response and minimize on-board output capacitance by up to 50 percent, further increasing system power density.

The new modules will be showcased at Infineon’s global technology forum OktoberTech 2024 in Silicon Valley on 17 October and at electronica 2024 in Munich from November 12 to 14 (hall C3, booth 502).

Samples of the OptiMOS dual-phase power modules TDM2354xD and TDM2354xT are available now.

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