Power Electronic Tips https://www.powerelectronictips.com/category/applications/ Power Electronic News, Editorial, Video and Resources Fri, 15 Nov 2024 17:59:40 +0000 en-US hourly 1 https://wordpress.org/?v=6.7 https://www.powerelectronictips.com/wp-content/uploads/2016/11/cropped-favicon-512x512-32x32.png Power Electronic Tips https://www.powerelectronictips.com/category/applications/ 32 32 Pulsiv claims first 240 W USB-C power delivery in single port https://www.powerelectronictips.com/pulsiv-claims-first-240-w-usb-c-power-delivery-in-single-port/ https://www.powerelectronictips.com/pulsiv-claims-first-240-w-usb-c-power-delivery-in-single-port/#respond Fri, 15 Nov 2024 17:59:40 +0000 https://www.powerelectronictips.com/?p=23558 Pulsiv Limited become the world’s first company to deliver 240W from a single USB-C port. This ground-breaking achievement has been developed by combining a Pulsiv OSMIUM front-end design with an industry standard flyback which passes strict EMC/Line Current requirements and is guaranteed to change the global charging market. Existing 240W USB-C chargers distribute the power across multiple ports […]

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Pulsiv Limited become the world’s first company to deliver 240W from a single USB-C port. This ground-breaking achievement has been developed by combining a Pulsiv OSMIUM front-end design with an industry standard flyback which passes strict EMC/Line Current requirements and is guaranteed to change the global charging market.

Existing 240W USB-C chargers distribute the power across multiple ports with a maximum of 140W being delivered from a single 1C port. This leaves many higher-power applications such as monitors, gaming laptops, and small domestic appliances unable to benefit from the common USB-C interface and fast-charging protocol. Traditional Boost PFC+LLC-based designs are notoriously noisy, so EMC compliance can be a challenge. They are also expensive and do not respond well to variable output voltages or rapidly changing load requirements. Pulsiv OSMIUM technology enables a flyback topology to be used at higher power levels which solves all of these problems.

The company’s strategy for deploying this exciting technology adds further flexibility for customers. Three options are set to be offered:

Reference Design. A reference design containing a datasheet, schematic, and bill of materials will be published on www.pulsiv.com in the coming weeks. This will enable anyone to start designing and laying out their own 240W USB-C solution and become one of the first in the world to adopt 240W USB-C.

Standard Assembled Module. For those whose resources and time are limited, Pulsiv will offer a standard fully assembled module with 1 x USB-C connector. The specification and design of this standard module has already started and pre-orders for samples can be placed now for delivery in late March 2025, with mass production quantities being delivered from July 2025 onwards. A number of Pulsiv’s distributors, including Digikey, will also stock the standard modules for fast delivery to customers globally.

Custom Assembled Module. For anyone that has more specific requirements, custom assembled modules will also be offered. This enables customers to determine their own specification, which can include the number and location of USB connectors, input voltage range, and any specific mechanical form factor requirements. This flexible option will come with an NRE of just $10,000 and an MOQ of 500pcs providing a very reasonable entry point for everyone.

For more information on this ground-breaking design, please contact the Pulsiv team, or any of their franchised distributors, or visit www.pulsiv.com

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MOSFET design combines low RDS(on) with extended safe operating area https://www.powerelectronictips.com/mosfet-design-combines-low-rdson-with-extended-safe-operating-area/ https://www.powerelectronictips.com/mosfet-design-combines-low-rdson-with-extended-safe-operating-area/#respond Wed, 13 Nov 2024 18:16:35 +0000 https://www.powerelectronictips.com/?p=23556 Infineon Technologies AG announces the new OptiMOS 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS(on) of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET. The device prevents damage to the load by limiting the high inrush current and ensures minimal losses […]

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Infineon Technologies AG announces the new OptiMOS 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS(on) of a trench MOSFET and the wide safe operating area (SOA) of a classic planar MOSFET. The device prevents damage to the load by limiting the high inrush current and ensures minimal losses during operation due to its low R DS(on). Compared to the previous generation (the OptiMOS Linear FET), the OptiMOS Linear FET 2 offers improved SOA at elevated temperatures and reduced gate leakage current, as well as a wider range of packages. This allows for more MOSFETs to be connected in parallel per controller, reducing bill-of-material (BOM) costs and offering more design flexibility due to the extended product portfolio.

The 100 V OptiMOS 5 Linear FET 2 is available in a TO-leadless package (TOLL) and offers a 12 times higher SOA at 54 V at 10 ms and 3.5 times higher SOA at 100 µs compared to a standard OptiMOS 5 with similar R DS(on). The latter improvement is particularly important for the battery protection performed inside the battery management system (BMS) in case of a short circuit event. During such events, the current distribution between parallel MOSFETs is critical for the system design and reliability. The OptiMOS 5 Linear FET 2 features an optimized transfer characteristic that allows for improved current sharing. Taking into account the wide SOA and improved current sharing, the number of components can be reduced by up to 60 percent in designs where the number of components is determined by the short-circuit current requirement. This enables high power density, efficiency, and reliability for battery protection which is used in a wide range of applications including power tools, e-bikes, e-scooters, forklifts, battery backup units, and battery-powered vehicles.

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Wide bandgap power devices from industrial motors to 8.5 kW data center systems https://www.powerelectronictips.com/wide-bandgap-power-devices-from-industrial-motors-to-8-5-kw-data-center-systems/ https://www.powerelectronictips.com/wide-bandgap-power-devices-from-industrial-motors-to-8-5-kw-data-center-systems/#respond Mon, 11 Nov 2024 05:07:09 +0000 https://www.powerelectronictips.com/?p=23546 Navitas Seminconductor is demonstrating new gallium nitride (GaN) and silicon carbide (SiC) power semiconductor technologies at electronica 2024, focusing on applications in AI data centers, electric vehicles, renewable energy, and industrial systems. A new 8.5 kW power supply for AI and hyperscale data centers combines GaN power ICs with third-generation SiC MOSFETs. The SiC components, […]

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Navitas Seminconductor is demonstrating new gallium nitride (GaN) and silicon carbide (SiC) power semiconductor technologies at electronica 2024, focusing on applications in AI data centers, electric vehicles, renewable energy, and industrial systems.

A new 8.5 kW power supply for AI and hyperscale data centers combines GaN power ICs with third-generation SiC MOSFETs. The SiC components, developed through two decades of research, use a trench-assisted planar technology that reduces case temperatures by up to 25°C compared to current devices. Testing indicates this temperature reduction can extend component lifespan by a factor of three.

The semiconductor advances include motor drive ICs for appliance and industrial applications, along with 650V bi-directional GaN technology for power conversion. New SiC modules target power grid infrastructure, renewable energy systems, EV charging stations, and uninterruptible power supplies.

Analysis from Yole Group indicates GaN and SiC technologies may represent 30% of the power semiconductor market by 2027, driven by demand for higher efficiency in data centers and electric vehicles. The technology’s reduced carbon footprint could contribute to CO2 emissions reduction targets through improved power conversion efficiency.

Technical discussions at the conference will examine how wide bandgap semiconductors can address thermal management challenges in high-power applications.

The technologies will be displayed at Hall C3, booth #129 at Trade Fair Center Messe München from November 12th-15th, 2024.

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