Dialog Semiconductor plc, a provider of highly integrated power management, AC/DC power conversion, solid state lighting (SSL) and Bluetooth® low energy technology, today announced and is demonstrating its first gallium nitride (GaN) power IC product offering, using Taiwan Semiconductor Manufacturing Corporation’s (TSMCs) 650 Volt GaN-on-Silicon process technology. The DA8801 together with Dialog’s patented digital Rapid Charge™ […]
Semiconductor
Low-capacitance TVS diode Arrays work as common-mode filters
Littelfuse has introduced a series of low capacitance TVS Diode Arrays optimized for protecting electronic equipment that may experience destructive electrostatic discharges (ESDs). SP814x Series TVS Diode Arrays (SPA® Diodes) integrate four or six channels of ultra-low-capacitance rail-to-rail diodes and an additional zener diode to safely absorb repetitive ESD strikes above the maximum level specified […]
GaN FET driver operates up to 33 MHz and handles voltages up to 80V
Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the word’s fastest gallium nitride (GaN) field-effect transistor (FET) driver, the UltraCMOS PE29100. Built on Peregrine’s UltraCMOS technology, this new GaN driver empowers design engineers to extract the full performance and speed advantages from GaN transistors. Designed to […]
SiC MOSFETs feature 1.7 kV breakdown voltage
ROHM has recently announced the availability of a new 1700V SiC MOSFET optimized for industrial applications, including manufacturing equipment and high-voltage general-purpose inverters. In recent years, the growing trend to conserve energy in all areas has increased the demand for energy-saving power semiconductors, particularly for applications in the industrial sector such as general-purpose inverters and […]
SiC Schottky Diodes handle 1.2 kV with little leakage current
Littelfuse, a global designer in circuit protection, introduced the latest addition to its growing line of power semiconductor products, the LFUSCD Series of Silicon Carbide (SiC) Schottky Diodes, at the European Power Conversion and Intelligent Motion 2016 exhibition in Nuremberg, Germany. When compared to standard silicon bipolar power diodes, LFUSCD Series SiC Schottky diodes allow designers to reduce […]
High-Speed Fuses reduce peak let-through current and let-through energy
Littelfuse, Inc. has announced a new line of high-speed fuses for protection of power semiconductor devices used in industrial equipment. The POWR-SPEED line of fuses uses a special bridge design, quenching material and element designs to provide fast, extreme current limitation. Manufacturing systems today use power semiconductor devices to control drives and optimize power utilization. […]
Power Magnetics Catalog Includes Reference Designs
Premier Magnetics, global producer of high-quality magnetic components for switch-mode power supplies, DC-DC converters and data communications applications, announces the availability of its new 87-page catalog providing details of the company’s extensive line of transformers, inductors and chokes designed specifically for switch-mode power supply applications. Also included are reference designs utilizing Premier Magnetics’ devices in […]
Schottky barrier rectifiers block 1.2 kV with low leakage
Littelfuse, Inc. has added two series to its expanding power semiconductor portfolio: the MBR Series Schottky Barrier Rectifiers (Standard Schottky) are the latest devices based on silicon Schottky diode technology; the DUR Series Ultrafast Rectifier provides ultrafast switching speed. Both series are designed to meet the general requirements of commercial and industrial applications. They will […]
Thermoelectric module for hi-rel applications
Global technology leader Laird has developed an advanced thermoelectric module (TEM) designed for high-reliability applications like polymerase chain reaction (PCR) thermal cycling, which require extended meantime between failure (MTBF). The polymerase chain reaction (PCR) is a biochemical technology that amplifies a single copy or a few strands of DNA across several orders of magnitude, generating […]
Device modeling software covers GaN and GaAs HEMTs
Keysight Technologies, Inc. has announced the newest release of its industry-leading device modeling and characterization software suite: Integrated Circuits Characterization and Analysis Program (IC-CAP) 2016, Model Builder Program (MBP) 2016, and Model Quality Assurance (MQA) 2016. The software release provides designers characterizing and modeling semiconductor devices with further advances in modeling and characterization efficiency. Keysight’s […]
