Infineon Technologies AG has launched StrongIRFET 2 – the new generation of power MOSFET technology in 80 V and 100 V. Featuring broad availability at distribution partners and excellent price/performance ratio make these right-fit products an easy choice for designers interested in convenient selection and purchasing. Optimized for both low- and high-switching frequencies, the family […]
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Fast-switching IGBT/Schottky diode combo targets on-board charger apps
Infineon Technologies AG has launched the 650 V CoolSiC Hybrid Discrete for Automotive. The device contains a 50 A TRENCHSTOP 5 fast-switching IGBT and a CoolSiC Schottky diode to enable a cost-efficient performance boost as well as high reliability. This combination builds a perfect cost-performance trade-off for hard-switching topologies and supports high system integrity in […]
Motor controller includes three-phase gate driver and voltage regulator
Infineon Technologies AG introduces the new IMD110 SmartDriver series. The smart motor controller family combines the iMOTION Motion Control Engine (MCE) with a three-phase gate driver in a compact package. The integrated gate driver is based on the company’s unique silicon-on-insulator (SOI) technology, it can drive a wide variety of MOSFETs and IGBTs in variable […]
IGBTs carry Schottky diodes to boost switching efficiency
Infineon Technologies AG has launched a 650 V CoolSiC Hybrid IGBT portfolio in a discrete package with 650 V blocking voltage. The CoolSiC hybrid product family combines the key benefits of the 650 V TRENCHSTOP 5 IGBT technology and the unipolar structure of co-packed Schottky barrier CoolSiC diodes. With superior switching frequencies and reduced switching […]
New 24 V dual-channel low-side gate driver handles fast MOSFETs, high-current IGBTs
Infineon Technologies AG broadens its EiceDRIVER portfolio with the new 24 V dual-channel low side gate driver with an integrated thermal pad. It can be operated with high switching frequencies as well as the highest peak output currents and offers an enable function. The gate driver is suitable for applications with higher switching frequencies such […]
Isolated gate drivers provide 5, 10, 14-A current outputs for SiC MOSFETs, IGBTs
Infineon Technologies AG adds a new generation to its most versatile and simple to use EiceDRIVER 1ED Compact isolated gate driver family: the X3 Compact (1ED31xx) family. This gate driver provides separate output options together with the active shutdown and short circuit clamping in DSO-8 300 mil package. The active Miller clamp option is best […]
Galvanically isolated gate drivers for IGBTs, SiC and Si MOSFETs
Infineon Technologies AG has launched the EiceDRIVER X3 Enhanced analog (1ED34xx) and digital (1ED38xx) gate driver ICs. These devices provide a typical output current of 3, 6, and 9 A, precise short-circuit detection, a Miller clamp, and soft turn-off. In addition, 1ED34xx offers an adjustable desaturation filter time and soft turn-off current with external resistors. […]
Power module integrates 6-channel 1.2-kV gate drivers, SiC MOSFETs
Infineon Technologies AG has launched a 1200 V transfer molded silicon carbide (SiC) integrated power module (IPM) and concludes the massive roll-out of SiC solutions for this year. The CIPOS Maxi IPM IM828 series is the industry’s first in this voltage class. The series provides a compact inverter solution with excellent thermal conduction and a […]
Three-phase IGBT, MOSFET gate drivers carry 1.2 kV ratings
Infineon Technologies AG broadens its level-shift EiceDRIVER portfolio with a 1200 V three-phase gate driver. It is based on the company’s unique silicon-on-insulator (SOI) technology. The device provides leading negative VS transient immunity, superior latch-up immunity, fast over-current protection, and the monolithic integration of real bootstrap diodes. These unique features reduce BOM and enable a […]
SMD MOSFETs cut losses in motor drive applications
Infineon Technologies AG supports the robotics and automation industry in implementing maintenance-free motor drive inverters. By introducing the new CoolSiC MOSFET with.XT interconnection technology in a 1200 V optimized D 2PAK-7 SMD package, passive cooling becomes possible. Up to 80 percent loss reduction compared to a silicon-based solution eliminates the need for cooling fans and […]
