Melexis has introduced the MLX81346, a single chip LIN pre-driver for high power up to 2000 W. The MLX81346 enables motor control miniaturization and efficient silent drive with field-oriented control (FOC). It addresses automotive mechatronic applications – including oil pumps, engine cooling fans, and BLDC positioning actuators. The device is also used in robotic systems […]
Motors and motor control
High-power 650/800 V-rated GaN modules feature low on resistance, high efficiency
Navitas Semiconductor has announced the NV6169, a new high-power 650/800 V-rated GaNFast power IC with GaNSense technology to address higher-power applications such as 400-1000 W 4K/8K TVs and displays, next-generation gaming systems, 500 W solar microinverters, 1.2 kW data-center SMPS, and up to 4 kW / 5 hp motor drives. GaN is a next-generation power […]
Super junction 600-V MOSFETs boast fast reverse recovery time
ROHM Semiconductor announced that they have added seven new devices, the R60xxVNx series, to the PrestoMOS lineup of 600V Super Junction MOSFETs which stand out for their class-leading low ON resistance and the industry’s fastest reverse recovery time (trr). The R60xxVNx series is optimized for power circuits in industrial equipment requiring high power, such as servers, […]
SiC 1.2-kV MOSFET features low on resistance
Solitron Devices is anouncing the introduction of the SD11720, 1200V Silicon Carbide (SiC), low RDS(on) MOSFET. Complimenting a strong offering of high voltage MOSFETs for high reliability/military applications Solitron is expanding its silicon carbide product offering for demanding commercial and industrial applications. Packaged in a TO-247 the SD11720 is ideally suited for EV, Renewable Energy, Motor […]
Flame-proof wirewound resistors target in-rush apps
TT Electronics announced the availability of its high surge, UL-recognised, fusible resistor family – the WHS-UL Series. Developed for inrush control applications, such as power supplies, UPS, energy metering, and motor drives, TT’s WHS-UL resistors offer enhanced surge and pulse energy withstand capability. A UL1412-recognised fusible resistor (UL file E234469), the WHS-UL provides failsafe fusing at […]
650-V SiC MOSFETs sport low reverse-recovery, drain-source charge
Infineon Technologies AG offers a new family of CoolSiC 650 V silicon carbide (SiC) MOSFETs to deliver reliable, easy-to-use, and cost-effective top performance. The devices build on Infineon’s state-of-the-art SiC trench technology and come in a compact D 2PAK SMD 7-pin package.XT interconnection technology. They target high-power applications including servers, telecom, industrial SMPS, fast EV charging, motor drives, solar energy […]
GaN HEMTs for hi-rel apps have NASA level 1 screening flow
Teledyne e2v HiRel announces the addition of new space screened versions of its popular 650 V, 60 A high-reliability gallium nitride high electron mobility transistors (GaN HEMTs). The new parts go through NASA Level 1 screening flow and can be brought up to full Level 1 conformance with extra qualification testing if desired. Typical applications […]
100-V high-speed 20-MHz FET/GaN transistor driver comes in flip chip die
Teledyne e2v HiRel announces the new TD99102 UltraCMOS High-speed FET and GaN transistor driver offering a very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne HiRel’s 100 V high-reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital Point-of-Load (POL) modules, and space motor drives. The TD99102 is an integrated high-speed […]
Compact BLDC motor drive inverter design targets e-bikes, drones, robotic apps
EPC announces the availability of the EPC9167, a 3-phase BLDC motor drive inverter using the EPC2065 eGaN FET. The EPC9167 operates from an input supply voltage between 14 V and 60 V (nominal 48 V) and has two configurations – a standard unit and a high current version: The EPC9167 standard reference design board is […]
Four-terminal shunts provide precision current sensing
Low resistance values are important for high-efficiency current sensing because lower values mean less wasted power on the current sensing measurement itself. But sensing low resistance values accurately becomes challenging because of lead resistance errors. Using a four-terminal shunt resistor eliminates the detrimental effects of lead resistance on the current sensing measurement operation. The HCSK1216 provides […]
