Nexperia announced three new TrEOS protection devices that provide the most compact method to suppress ESD in USB3.2, HDMI2.1, and other high-speed data lines. The new PUSB3BB2DF, PESD5V0C2BDF, PESD4V0Z2BCDF devices provide best-in-class ESD protection and system robustness by combining high RF performance with very low clamping and very high surge capability. The new parts […]
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80 V RETs feature overhead to handle spikes and pulses
Nexperia announced the industry’s first 80 V RET (Resistor-Equipped Transistor) family. These new RETs or ‘digital transistors’ provide enough headroom for use in 48 V automotive board net (e.g. mild hybrid and EV cars) and other higher voltage circuits which are often subject to large spikes and pulses that previous 50 V parts cannot handle. […]
LED drivers in SOT1118D package features side-wettable flanks
Nexperia announced a new range of LED drivers in the space-saving DFN2020D-6 (SOT1118D) package. This case style features side-wettable flanks (SWF) which facilitate the use of AOI (automated optical inspection), and improve reliability. This is the first time LED drivers have been available in this beneficial package. The new leadless devices join Nexperia’s wide range of LED […]
Miniature common mode filters combine wide differential bandpass with ESD protection
Nexperia, the expert in essential semiconductors, has announced its new PCMFxHDMI2BA-C, a combined, highly efficient, common mode filter and ESD protection device with the widest 10 GHz differential bandwidth. It is suitable for the latest HDMI 2.1 standard up to 12G FRL, where eye-diagram tests were passed even with “worst cable model”. This highly integrated PCMFxHDMI2BA-C device provides excellent common […]
Newark to handle Nexperia power GaN FETS for reduced power loss in EVs, 5G and IoT
Electronics distributor Newark now handles Nexperia’s new-to-market, innovative Power Gallium Nitride (GaN) FET range. GaN FET products deliver improved density and efficient power usage in a small form factor, enabling the development of efficient systems at a lower cost, and providing the potential to transform power performance in electric vehicles, 5G communications, IoT and more. […]
Next-gen, 650 V GaN devices in copper-clip SMD package deliver high-efficiency to automotive, industrial apps
Nexperia has announced a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging. Devices achieve superior switching FOMs and on-state performance with improved stability, and simplify application designs thanks to their cascode configuration which eliminates the need for complicated drivers […]
AEC-Q101-approved SiGe rectifiers combine high efficiency, thermal stability and space-savings
Nexperia has announced a range of new silicon germanium (SiGe) rectifiers with 120 V, 150 V, and 200 V reverse voltages that combine the high efficiency of their Schottky counterparts with the thermal stability of fast recovery diodes. Targeting automotive, communications infrastructure and server markets, the new 1-3 A SiGe rectifiers are of particular benefit […]
P-channel MOSFETs now available in Power-SO8 package
Nexperia has launched industry’s first family of P-channel MOSFETs in the robust, space-saving LFPAK56 (Power-SO8) package. AEC-Q101 qualified for automotive applications, the new devices are an ideal replacement for DPAK MOSFETs, offering a reduction in footprint of over 50% whilst maintaining high performance levels. The new products are available in 30 V – 60 V, […]
Achtung! Power technology on display at PCIM Nuremberg
PCIM Europe is billed as the world’s leading exhibition and conference for power electronics, intelligent motion, renewable energy, and energy management. Recently wrapping up in Nuremberg, the exhibition portion of PCIM featured over 500 booths. Here are some of the more notable technology displays we saw in touring the event. NEXT PAGE: Smaller inverters for […]
New MOSFET package delivers up to 48x power density
Nexperia announced a new package in its MOSFET and LFPAK family which, when combined with its latest silicon technology, results in 40 V MOSFETs delivering a low RDS(on) of 0.7 mΩ. LFPAK88 devices replace larger power packages such as D²PAK and D²PAK-7, and measuring 8 x 8 mm offer a footprint reduction of 60 %, and […]
