EPC announces the introduction of two new 40 V-rated radiation-hardened GaN FETs. EPC7001 is a 40 V, 4 mΩ, 250 A_Pulsed, rad-hard GaN FET in a small 7 mm² footprint. EPC7002 is a 40 V, 14.5 mΩ, 62 A_Pulsed, rad-hard GaN FET in a tiny 1.87 mm² footprint.  Both devices have a total dose radiation rating greater than 1,000K Rad(Si) and SEE immunity for LET of 83.7 MeV/mg/cm² with V_DS up to 100% of rated breakdown. These new devices, along with the rest of the Rad Hard family, are offered in a chip-scale package.  Packaged versions are available from EPC Space.

EPC’s eGaN FETs and ICs offer a higher-performing alternative to conventional rad hard silicon devices for high reliability and space applications. EPC’s rad-hard devices are significantly smaller, have 40 times better electrical performance, and lower overall cost than rad-hard silicon devices. Moreover, EPC’s rad-hard devices exhibit superior resistance to radiation, supporting higher total radiation levels and SEE LET levels compared to traditional silicon solutions.

Applications benefiting from the performance and fast deployment of these devices include DC-DC power converters, motor drives, lidar, deep probes, and ion thrusters for space applications. They are particularly well-suited for satellites operating in both Low Earth Orbit (LEO) and Geosynchronous Earth Orbit (GEO), as well as avionics systems.

The EPC7001 and EPC7002 are available for engineering sampling now.