Transphorm today announced availability of its third generation (Gen III) 650-V GaN FETs. Power transistors built on Gen III technology yield lower electromagnetic interference (EMI), increased gate noise immunity, and greater headroom in circuit applications. The latest evolution of the award-winning platform stems from knowledge gained by the Transphorm team working with customers on end […]
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High voltage GaN application development resources available online
Transphorm Inc. announced the latest resources for high voltage GaN application development produced by its Silicon Valley Center of Excellence. The Center is responsible for educating and supporting customers developing with high-voltage (HV) wide bandgap semiconductor. Application design engineers can access tools, app notes, SPICE models and more via the Center’s Design Resources library. For questions regarding […]
Servo motor first to use high-voltage (HV) GaN
Transphorm Inc. along with Yaskawa Electric Corporation announced that Yaskawa’s Σ-7 F is the first servo motor to use high-voltage (HV) GaN. Transphorm’s technology enables Yaskawa to deliver better performance in a smaller form factor versus what is possible with incumbent silicon semiconductors. The groundbreaking achievement of this co-developed device is that the Σ-7 F integrates […]
First GaN-based AC-DC power supply with totem pole PFC topology
Transphorm Inc. stated today that the recently announced high-efficiency TET3000-12-069RA power supply marks another GaN industry milestone. Developed by Bel Power Solutions, a Bel group company, the AC to DC front-end TET3000 uses a GaN-based bridgeless totem-pole power factor correction (PFC) topology to achieve greater than 96 percent efficiency. The power supply will be displayed during […]
High-efficiency, fast-switching GaN FET earns AEC-Q101 qualification
Transphorm Inc. announced that its second generation, JEDEC-qualified high voltage gallium nitride (GaN) technology is now the industry’s first GaN solution to earn automotive qualification—having passed the Automotive Electronics Council’s AEC-Q101 stress tests for automotive-grade discrete semiconductors. Transphorm’s automotive GaN FET, the TPH3205WSBQA, offers an on-resistance of 49 milliOhms (mΩ) in an industry standard TO-247 […]
Transphorm promotes development of high-speed, high-voltage GaN power systems with new Silicon Valley center of excellence
Transphorm Inc., the leader in the design and manufacturing of JEDEC-qualified 650V gallium nitride (GaN) semiconductors, formally introduced its Silicon Valley Center of Excellence today. Established over the past year, the Center is Transphorm’s customer support initiative for high-voltage-GaN-based power application development. The Center’s mission is to educate and support customers developing with high voltage […]
GaN FET boasts 72 mΩ on resistance
Transphorm Inc., a leader in the design and manufacturing of JEDEC-qualified 650V GaN (gallium nitride) semiconductors, today announced its latest portfolio addition: the TPH3212PS. Available in a TO-220 package, the device has an on-resistance of 72 mOhms (mΩ) and targets AC to DC and DC to AC power supplies. When used inside the former, the […]
