Qorvo announced a next-generation series of 1200V Silicon Carbide (SiC) Field Effect Transistors (FETs) with industry-leading figures of merit in on-resistance. The new UF4C/SC series of 1200V Gen 4 SiC FETs are ideally suited for mainstream 800V bus architectures in onboard chargers for electric vehicles, industrial battery chargers, industrial power supplies, DC/DC solar inverters, as well as […]
Transistors
eGaN 100-V FETs feature lower gate charges, zero reverse-recovery losses
Efficient Power Conversion Corporation expands the selection of low voltage, off-the-shelf gallium nitride transistors with the introduction of the EPC2071 (1.7 mΩ typical, 100 V) GaN FET. The EPC2071 is ideal for applications with demanding requirements for high power density performance including 48 V – 54 V input DC-DC for new servers and artificial intelligence. […]
Silicon carbide (SiC) substrates designed to improve performances of power electronics devices, increase efficiency
Soitec (Euronext Paris) has released its first 200mm silicon carbide SmartSiC wafer. With the release, Soitec is able to enlarge its SiC product portfolio beyond 150mm, take the development of its SmartSiC™ wafers to the next level and cater to the growing demand of the automotive market. The SmartSiC substrate in 200mm emerged from Soitec’s pilot […]
40-V MOSFET targets BDC motor apps in vehicles
Magnachip Semiconductor Corporation announced that the company has released a new 40V Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) to control Brushless Direct Current (BLDC) motors for automotive applications. Given concerns about global climate change and corresponding efforts to reduce carbon emissions, the Electric Vehicle (EV) market is projected to grow significantly. Omdia, a global market research firm, […]
Common-source dual GaN FET features 58 mΩ RDS(on), 20-A pulsed output current
EPC announces the introduction of the EPC2221, a common source dual gallium nitride FET rated at 100 V, 58 mΩ, and 20 A pulsed current. The EPC2221 can be used in lidar systems for robots, surveillance systems, drones, autonomous cars, and vacuum cleaners. The low inductance and capacitance of the EPC2221 allow fast switching (100 […]
STMicroelectronics’ 50W GaN converter enables high-efficiency power designs in consumer and industrial applications
The STMicroelectronics VIPerGaN50 simplifies building single-switch flyback converters up to 50 Watts and integrates a 650V gallium-nitride (GaN) power transistor for superior energy efficiency and miniaturization. With its single-switch topology and high integration, including current-sensing and protection circuitry also built-in, the VIPerGaN50 comes in a compact and low-cost 5mm x 6mm package. The speed of the integrated […]
Chip capacitors feature 500-V ratings, handle snubber, output cap tasks
TDK Corporation has expanded its tried-and-tested range of CeraLink capacitors. Previously, only large, ready-to-fit sizes were available. Now, smaller versions with the classic chip design are included in the portfolio in order to increase the areas of application. The new portfolio starts with the EIA 2220 size, measuring 5.7 x 5 x 1.4 mm, is […]
Rad-hard GaN transistors sport super-low on resistance
EPC announces the introduction of the EPC7019 radiation-hardened eGaN FET. The EPC7019, a 40 V, 1.5 mΩ, 530 APulsed, rad-hard eGaN FET in a small 13.9 mm2 footprint. The EPC7019 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, […]
100-V high-speed 20-MHz FET/GaN transistor driver comes in flip chip die
Teledyne e2v HiRel announces the new TD99102 UltraCMOS High-speed FET and GaN transistor driver offering a very high switching speed of 20 MHz. The new flip-chip part is ideal for driving Teledyne HiRel’s 100 V high-reliability GaN HEMT devices in DC-DC, AC-DC converters, orbital Point-of-Load (POL) modules, and space motor drives. The TD99102 is an integrated high-speed […]
GaN-on-SiC HEMT transistors offer broadband high linearity
Ampleon announced the release of two new broadband GaN-on-SiC HEMT transistors in the power classes of 30 Watts CLF3H0060(S)-30, 100 Watts CLF3H0035(S)-100. These high linearity devices are the initial products from our Generation 3 GaN-SiC HEMT process recently qualified and released to production. The devices offer broadband high linearity features under low bias settings to […]
