CML Micro has introduced a Ka-band gallium nitride (GaN) power amplifier designed for commercial high-volume satellite communication terminals.

The CMX90A705 is a two-stage GaN linear power amplifier delivering +37.4 dBm (5.5 W) of saturated power, covering a frequency range of 27.5 to 31 GHz and offering 16.5 dB of small signal gain. It can function as both a driver and the final stage of power amplification in satellite communication terminals.

The power amplifier is designed for ease of integration, with RF input and output ports matched to 50 Ω and integrated DC blocking capacitors. Drain and gate feed decoupling capacitors suitable for QPSK type modulation are included in the evaluation board.

The active device is fabricated using a 0.15 µm gate length GaN-on-silicon carbide (SiC) process and presented in a compact 4x4mm thermally enhanced air-cavity Quad Flat No-Lead (QFN) packaging.

The CMX90A705 is intended for applications such as commercial high-volume Ka-band satcom terminals, block up-converters (BUC), VSAT, and SSPAs. It comes with a detailed data sheet, and CML Micro offers full support through its sales and applications teams. The product will be available through global distribution partners, including DigiKey, Mouser, and RFMW.

This launch marks CML Micro’s entry into the satcom mmWave market with a high-power GaN-based device. Currently, the amplifier delivers 5.5 W at Ka-band, with the potential to reach 10 W or 20 W by combining multiple devices on a board.